Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer
sequential processing chamber. The process gases are sequentially rotated among
the wafer stations to deposit a portion of a total deposition thickness on each
wafer at each station. A rapid rotary switching of the process gases eliminates
having to divert the process gases to a system vent and provides for atomic layer
film growth sufficient for high-volume production applications. Conventional chemical
vapor deposition can also be performed concurrently with atomic layer deposition
within the multi-wafer sequential processing chamber.
