A boost voltage circuit includes a plurality of N channel type MOS transistors
connected between an input terminal and an output terminal in series, wherein one
electrode of each of the N channel type MOS transistors is connected to each of
external terminals to which a capacitor can be connected to generate a boost voltage.
A plurality of P channel type MOS transistors are respectively connected to each
of the N channel type MOS transistors in parallel. Thereby, a boost voltage circuit
with improved stability is provided so that the boost voltage circuit is started
without increase of consumption current.
