A silicon wafer is doped with boron and germanium in a range that satisfies a
relational
expression defined by: -0.810-34.6410-24[Ge]-2.6910-23[B]1.510-3.
This can reduce the miss-fit dislocation which might be induced when an epitaxial
layer is grown over the silicon wafer that has been added with boron in high concentration.
It is to be noted that in the above relational expression, the [B] denotes a boron
concentration, while the [Ge] denotes a germanium concentration and a concentration
unit is indicated by atoms/cm3.
