Semiconductor light emitting sources are formed to have a substrate,
an active region layer having one or more quantum wells, optical confinement layers
surrounding the active region layer, and a p-type cladding layer and an n-type
cladding layer surrounding the confinement layers and the active region layer.
At least one of the optical confinement layers has a region of doping therein that
is formed to provide a built-in electric field in the confinement layer that is
directed to cause drift of carriers toward the active region. The electric field
increases the transport speed of the injected holes or electrons, thereby reducing
the non-ohmic voltage drop and increasing the overall efficiency of the light emitting source.
