Resistive cross-point memory devices are provided, along with methods of
manufacture and use. The memory devices are comprised by an active layer of resistive
memory material interposed between upper electrodes and lower electrodes. A bit
region located within the resistive memory material at the cross-point of an upper
electrode and a lower electrode has a resistivity that can change through a range
of values in response to application of one, or more, voltage pulses. Voltage pulses
may be used to increase the resistivity of the bit region, decrease the resistivity
of the bit region, or determine the resistivity of the bit region. A diode is formed
between at the interface between the resistive memory material and the lower electrodes,
which may be formed as doped regions. The resistive cross-point memory device is
formed by doping lines within a substrate one polarity, and then doping regions
of the lines the opposite polarity to form diodes. Bottom electrodes are then formed
over the diodes with a layer of resistive memory material overlying the bottom
electrodes. Top electrodes may then be added at an angled to form a cross-point
array defined by the lines and the top electrodes.
