Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer

   
   

A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

 
Web www.patentalert.com

< Sacrificial annealing layer for a semiconductor device and a method of fabrication

< Semiconductor device and manufacturing method therefor

> Photodiode

> Surface passivation to reduce dark current in a CMOS image sensor

~ 00189