A TFT capable of showing a large gm (large ON-current) and having characteristics
comparable to those of Si-MOSFET despite of its relatively simple configuration
was fabricated by the steps of coating, for example, a positive photo-resist on
an Mo film; subjecting the photo-resist to back light exposure from the glass-substrate
side under masking with a bottom gate electrode, to thereby form a resist pattern
having the same geometry and being aligned with the bottom gate electrode because
exposure light is intercepted by the bottom gate electrode but can travel through
the Mo film; and etching the Mo film under masking by the resist pattern to thereby
form a top gate electrode in conformity with the geometry of the resist pattern
in a self-aligned manner.
