There is disclosed a semiconductor device and a method of fabricating the semiconductor
device in which a heat treatment time required for crystal growth is shortened
and a process is simplified. Two catalytic element introduction regions are arranged
at both sides of one active layer and crystallization is made. A boundary portion
where crystal growth from one catalytic element introduction region meets crystal
growth from the other catalytic element introduction region is formed in a region
which becomes a source region or drain region.
