A method and apparatus for depositing single crystal, epitaxial films of silicon
carbon and silicon germanium carbon on a plurality of substrates in a hot wall,
isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature
growth technique in the range from 350 C. to 750 C. is described for
incorporating carbon epitaxially in Si and SiGe films with very abrupt and well
defined junctions, but without any associated oxygen background contamination.
Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type
and with the presence of low concentration of carbon <1020 cm-;3,
the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures
of 850 C. and rapid thermal anneal temperatures to 1000 C.
