In one embodiment, the present invention relates to a method for pre-treating
and etching a dielectric layer in a semiconductor device comprising the steps of:
(A) pre-treating one or more exposed portions of a dielectric layer with a plasma
in a plasma etching tool to increase removal rate of the one or more exposed portions
upon etching; and (B) removing the one or more exposed portions of the dielectric
layer in the same plasma etching tool of step (A) via plasma etching.
