To propose a new channel structure suitable for high efficiency source side injection,
and provide a non-volatile semiconductor memory device and a charge injection method
using the same. The non-volatile memory device includes a first conductivity type
semiconductor substrate (SUB), a first conductivity type inversion layer-forming
region (CH1), second conductivity type accumulation layer-forming regions
(ACLa, ACL2b), second conductivity type regions (S/D1, S/D2),
an insulating film (GD0) and a first conductive layer (CL) formed on the
inversion layer-forming region (CH1). A charge accumulation film (GD) and
a second conductive layer (WL) are stacked on an upper surface and side surface
of the first conductive layer (CL), an exposure surface of the inversion layer-forming
region (CH1), and an upper surface of the accumulation layer-forming regions
(ACLa, ACLb) and the second conductivity type regions (S/D1, S/D2).
The second conductive layer (WL) is connected to a word line and second conductivity
type regions (S/D1, S/D2) are connected to bit lines (Bla, BLb).
