A semiconductor laser module is provided for emitting pumping laser light which
excels in temporal stability. The semiconductor laser module comprises a semiconductor
laser device which has a layered structure formed on a GaAs substrate, wherein
the layered structure has an active layer in a quantum well structure, formed of
semiconductor materials including Ga and As, and a member having a light feedback
function. The two components are optically coupled. A well layer in the active
layer of the semiconductor laser device is a thick layer having a thickness of
10 nm or more. The active layer is doped with Si, and an n-type cladding layer
underlying the active layer is also doped with Si.
