A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus
having an air shield chamber in which are disposed a treated plate including a
substrate and a semiconductor layer formed directly or indirectly thereon, and
a target material having atoms with which a semiconductor layer is to be doped.
At least one laser beam is directed to at least a part of the semiconductor layer
and at least a part of the target material. Where multiple beams are used, whether
from a single or multiple sources, one beam is directed at the semiconductor layer
and another beam is directed to the target material. Where a single beam is used,
the beam is directed at the semiconductor layer and at least a portion of the laser
beam is reflected by the semiconductor layer to be incident on the target material.
