The present invention includes a method of fabricating a non-volatile memory
device having two transistors for two-bit operations to improve electron trapping
efficiency and integration degree of the non-volatile memory device, and a method
of driving the non-volatile memory device. The EEPROM device acccording to the
present invention comprises a silicon substrate including a first and a second
channel area, a first and a second conductive gate on the first and the second
channel area, respectively, facing each other, a first and a second insulation
layer in the bottom of the first and the second gate, and a first and a second
junction area of a second conductive type between the first and the second channel
area overlapping with the first and the second conductive gate.
