A semiconductor display device with an interlayer insulating film in which surface
levelness is ensured with a limited film formation time, heat treatment for removing
moisture does not take long, and moisture in the interlayer insulating film is
prevented from escaping into a film or electrode adjacent to the interlayer insulating
film. A TFT is formed and then a nitrogen-containing inorganic insulating film
that transmits less moisture compared to organic resin film is formed so as to
cover the TFT. Next, organic resin including photosensitive acrylic resin is applied
and an opening is formed by partially exposing the organic resin film to light.
The organic resin film where the opening is formed, is then covered with a nitrogen-containing
inorganic insulating film which transmits less moisture than organic resin film
does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing
inorganic insulating films are partially etched away in the opening of the organic
resin film to expose the active layer of the TFT.