The present invention is directed to methods for making electronic devices with
a thin anisotropic conducting layer interface layer formed between a substrate
and an active device layer that is preferably patterned conductive layer. The interface
layer preferably provides Ohmic and/or rectifying contact between the active device
layer and the substrate and preferably provides good adhesion of the active device
layer to the substrate. The active device layer is preferably fashioned from a
nanoparticle ink solution that is patterned using embossing methods or other suitable
printing and/or imaging methods. The active device layer is preferably patterned
into an array of gate structures suitable for the fabrication of thin film transistors
and the like.
