A magnetic random access memory includes a memory cell array having memory cells
using a magnetoresistive effect, a first functional line which runs in a first
direction in the memory cell array and is commonly connected without an intervening
select switch to one terminal of each of the memory cells, second functional lines
which are arranged in correspondence with the memory cells and run in a second
direction perpendicular to the first direction in the memory cell array, each second
functional line being connected without an intervening select switch to a corresponding
memory cell, and a third functional line which is electrically insulated from the
memory cells and generates a magnetic field to write data in the memory cells such
that the magnetic field is shared by the memory cells.
