A method for forming a hybrid active electronic and optical circuit using a lithography
mask. The hybrid active electronic and optical circuit comprising an active electronic
device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The
SOI wafer including an insulator layer and an upper silicon layer. The upper silicon
layer including at least one component of the active electronic device and at least
one component of the optical device. The method comprising projecting the lithography
mask onto the SOT waver in order to simultaneously pattern the component of the
active electronic device and the component of the optical device on the SOI wafer.
