There is provided a semiconductor device which is manufactured via steps of
forming a capacitor which is obtained by forming in sequence an upper electrode,
a dielectric film formed of ferroelectric material or high-dielectric material,
and a lower electrode on a semiconductor substrate, then forming an interlayer
insulating film on the capacitor, then planarizing a surface of the interlayer
insulating film by the CMP polishing, then removing a moisture attached to a surface
of the interlayer insulating film or a moisture contained in the interlayer insulating
film by applying the plasma annealing using an N2O gas, and then forming
a redeposited interlayer film on the interlayer insulating film.
