An MRAM device comprising an array of MRAM elements, with each element having
an MRAM bit influenced by a magnetic field from a current flowing through a conductor,
also includes a magnetic keeper formed adjacent the conductor to advantageously
alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating
the field within the keeper thereby reducing the extent in which fringe field exists,
thus allowing the MRAM elements to be formed closer to increase the areal density
of the MRAM device. Increase in magnetic field flux due to the magnetic keeper
allows operation of the MRAM device with lowered power. Soft magnetic materials
such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the
magnetic keeper.
