The present invention is characterized in that a semiconductor film containing
a rare gas element is formed on a crystalline semiconductor film obtained by using
a catalytic element via a barrier layer, and the catalytic element is moved from
the crystalline semiconductor film to the semiconductor film containing a rare
gas element by a heat treatment. Furthermore, a first impurity region and a second
impurity region formed in a semiconductor layer of a first n-channel TFT are provided
outside a gate electrode. A third impurity region formed in a semiconductor layer
of a second n-channel TFT is provided so as to be partially overlapped with a gate
electrode. A third impurity region is provided outside a gate electrode. A fourth
impurity region formed in a semiconductor layer of a p-channel TFT is provided
so as to be partially overlapped with a gate electrode. A fifth impurity region
is provided outside a gate electrode.
