A GaN semiconductor stack layer is formed on top of a substrate for manufacturing
a light emitting diode. The GaN semiconductor stack layer includes, from the bottom
up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact
layer. The next step is to form a digital transparent layer on the P-type GaN contact
layer, then use dry etching technique to etch downward through the digital transparent
layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact
layer, and form an N-metal forming area within the N-type GaN contact layer. The
next step is to form a first ohmic contact electrode on the P-type contact layer
to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal
forming area to serve as N-type ohmic contact. Finally, a bump pad is formed on
the first ohmic contact electrode and the second ohmic contact electrode, respectively.
