Methods and systems for monitoring semiconductor fabrication processes are
provided. A system may include a stage configured to support a specimen and coupled
to a measurement device. The measurement device may include an illumination system
and a detection system. The illumination system and the detection system may be
configured such that the system may be configured to determine multiple properties
of the specimen. For example, the system may be configured to determine multiple
properties of a specimen including, but not limited to, a property of a specimen
prior to, during, or subsequent to an etch process. In this manner, a measurement
device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
