The invention relates to a silicone nitride based substrate for semi-conductor
components, said substrate containing silicon nitride (Si3N4), silicon carbide
(SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content
is less or equal to 5%, the shrinkage during production is less than 5% and the
open porosity of the substrate is less than 15% vol. %. The invention also relates
to a method for the production and use of said substrate as an element of semi-conductor
components, particularly thin film solar cells, and semi-conductor components which
contain said substrate.
