A semiconductor device for an integrated injection logic cell having a pnp bipolar
transistor structure formed on a semiconductor substrate, wherein at least one
layer of insulating films formed on a base region of the pnp bipolar transistor
structure is comprised of a silicon nitride film. The semiconductor device of the
present invention is advantageous in that the silicon nitride film constituting
at least one layer of the insulating films formed on the base region of the pnp
bipolar transistor prevents an occurrence of contamination on the surface of the
base region, so that both the properties of the pnp bipolar transistor and the
operation of the IIL cell can be stabilized. Further, by the process of the present
invention, the above-mentioned excellent semiconductor device can be produced.
