This semiconductor laser device comprises a semiconductor laser element 10,
which is provided with a Cr layer 13 and an Au layer 14, a silicon
submount 20, which is provided with a Cr layer 22 and an Au layer
23, and a metal base 30. The surface of the semiconductor laser element
10 on which the Au layer 14 is provided and the surface of the silicon
submount 20 on which the Au layer 23 is provided are directly joined together.
