Nanostructures and methods of fabricating nanostructures are disclosed.
A representative nanostructure includes a substrate having at least one semiconductor
oxide. In addition, the nanostructure has a substantially rectangular cross-section.
A method of preparing a plurality of semiconductor oxide nanostructures that have
a substantially rectangular cross-section from an oxide powder is disclosed. A
representative method includes: heating the oxide powder to an evaporation temperature
of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about
400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming
the plurality of semiconductor oxide nanostructures.
