In a multi-chip module semiconductor device (1), at least one first semiconductor
die (20) is mounted on the base portion (11) of a lead-frame (10).
A flip chip IC die (30) is mounted by first bump electrodes (31)
to electrode contacts (G, S) on the at least one first die (20)
and by second bump electrodes (32) to terminal pins (14) of the lead
frame. The integrated circuit of the flip chip (30) does not require any
lead-frame base-portion area for mounting, and low impedance circuit connections
are provided by the bump electrodes (31, 32). The first die (20)
may be a MOSFET power switching transistor, with a gate driver circuit in the flip
chip (30). The circuit impedance for the switching transistor may be further
reduced by having distributed parallel gate connections (G), which may alternate
with distributed parallel source connections (S), and furthermore by having
distributed and alternating power supply connections (VCC, GND). The module may
comprise two series connected transistors (201, 202) and a control circuit
flip chip (300), with bump electrodes (31, 32) and strap connections
(181, 182) for providing a dc-dc converter without any wire bonds.
