The invention provides a semiconductor device and a method for manufacturing
the same that are capable of contributing to a further chip downsizing in the cross-point
FeRAM. More particularly, a first local wiring can be formed on a first interlayer
insulating layer so as to connect a drain region and part of a gate electrode in
a MOS transistor and a top layer wiring. A second local wiring can be formed on
a second interlayer insulating layer so as to connect a source region in the MOS
transistor and a lower electrode layer in a ferroelectric capacitor, and further
to connect part of a gate electrode in the MOS transistor and the top layer wiring.
The MOS transistor that makes up of a peripheral circuitry using only the first
and second local wiring can be formed directly under a capacitor array forming
region of cross-point FeRAM.
