A chemical vapor deposition method of providing a layer of material atop a semiconductor
wafer using an organic precursor includes, a) positioning a wafer within a chemical
vapor deposition reactor; b) injecting an organic precursor to within the reactor
having the wafer positioned therein, and maintaining the reactor at a temperature
and a pressure which in combination are effective to deposit a first layer of material
onto the wafer which incorporates carbon from the organic precursor; and c) after
depositing the first layer, ceasing to inject the organic precursor into the reactor
and injecting a component gas into the reactor and generating a plasma within the
reactor against the first layer, the component gas and plasma generated therefrom
having a component which is effective when in an activated state to interact with
a component of the deposited first layer to remove carbon from the first layer
and produce gaseous products which are expelled from the reactor. In one aspect,
the component gas provides a bonding component which replaces and substitutes for
the carbon displaced from carbide present in the layer. In another aspect, the
"b" and "c" steps are repeated to deposit more of the same layers.
