The present invention provides a process of manufacturing a semiconductor device
that comprises a process of manufacturing a semiconductor device that includes
plasma etching 250 through a patterned hardmask layer 210 located
over a semiconductor substrate 225 wherein the plasma etching forms a modified
layer 210a on the hardmask layer 210, and removing at least
a substantial portion of the modified layer 210a by exposing the
modified layer 210a to a post plasma clean process.
