A process for producing monocrystalline semiconductor layers. In an exemplary
embodiment,
a graded Si1-xGex (x increases from 0 to y) is deposited
on a first silicon substrate, followed by deposition of a relaxed Si1-yGey
layer, a thin strained Si1-zGez layer and another relaxed
Si1-yGey layer. Hydrogen ions are then introduced into the
strained SizGez layer. The relaxed Si1-yGey
layer is bonded to a second oxidized substrate. An annealing treatment splits
the bonded pair at the strained Si layer, such that the second relaxed Si1-yGey
layer remains on the second substrate. In another exemplary embodiment, a
graded Si1-xGex is deposited on a first silicon substrate,
where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer
is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close
to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen
ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed
GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits
the bonded pair at the hydrogen ion rich layer, such that the upper portion of
relaxed GaAs layer remains on the second substrate.
