A high pressure chamber comprises a chamber housing, a platen, and a mechanical
drive mechanism. The chamber housing comprises a first sealing surface. The platen
comprises a region for holding the semiconductor substrate and a second sealing
surface. The mechanical drive mechanism couples the platen to the chamber housing.
In operation, the mechanical drive mechanism separates the platen from the chamber
housing for loading of the semiconductor substrate. In further operation, the mechanical
drive mechanism causes the second sealing surface of the platen and the first sealing
surface of the chamber housing to form a high pressure processing chamber around
the semiconductor substrate.
