A conjugated polymer layer with a built-in diode is formed by providing a first
metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide
layer is provided over and in contact with the first metal-chalcogenide layer.
The first metal-chalcogenide layer has a first conductivity type and the second
metal-chalcogenide layer has a second conductivity type. The plane of contact between
the first and second metal-chalcogenide layers creates the p-n junction of the
built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide
layer. The second metal-chalcogenide layer provides ions to the polymer layer to
change its resistivity. A top electrode is then provided over the polymer layer.
An exemplary memory cell may have the following stacked structure: first electrode/n-type
semiconductor/p-type semiconductor/conjugated polymer/second electrode.
