A ferroelectric memory device includes first electrodes, second electrodes arranged
in a direction which intersects the first electrodes, and ferroelectric films disposed
in at least intersecting regions of the first electrodes and the second electrodes.
Capacitors formed of the first electrodes, the ferroelectric films, and the second
electrodes are disposed in a matrix. A ferroelectric phase and a paraelectric phase
are mixed in each of the ferroelectric films.
