An aging unit (DAC) for processing a wafer W having a coated film formed thereon
includes a disposing plate, a temperature control circulating device for controlling
the temperature of the disposing plate, a chamber, a gas supply mechanism for supplying
an ammonia gas containing a water vapor into the chamber, an input section for
inputting the processing time of the wafer W, and a control device for controlling
the temperature of the disposing plate, the supply rate of the ammonia gas, and
the amount of the water vapor contained in the ammonia gas so as to permit the
processing of the wafer W to be finished in the processing time inputted into the
input section.
