An amorphous semiconductor film is etched so that a width of a narrowest portion
thereof is 100 m or less, thereby forming island semiconductor regions.
By irradiating an intense light such as a laser into the island semiconductor regions,
photo-annealing is performed to crystallize it. Then, of end portions (peripheral
portions) of the island semiconductor regions, at least a portion used to form
a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses
is etched, so that a region that the distortion is accumulated is removed. By using
such semiconductor regions, a TFT is produced.
