A first moisture blocking layer formed of a silicon type nitride film such as
SiNx
or the like is formed over the entire surface so as to cover a drain electrode
and a source electrode of a TFT. On the first moisture blocking layer, a first
planarization film formed of an organic material is provided. On the first planarization
film, a second moisture blocking layer formed of SiNx or the like is provided.
In the peripheral region, the second moisture blocking layer extends down on the
first moisture blocking layer and is connected with the first moisture blocking
layer. Also, a sealing glass is bonded to the second moisture blocking layer using
the sealing member. By enclosing the first planarization film by the first moisture
blocking layer and the second moisture blocking layer, intrusion of external moisture
can be effectively prevented.
