A magnetic memory cell includes a first magneto-resistive device and a second
magneto-resistive
device. The first magneto-resistive device has a first sense layer. The second
magneto-resistive device is connected in series with the first magneto-resistive
device. The second magneto-resistive device has a second sense layer. At least
one controlled nucleation site is placed on at least one of the first sense layer
and the second sense layer.
