An imaging device formed as a CMOS semiconductor integrated circuit includes a
doped polysilicon contact line between the floating diffusion region and the gate
of a source follower output transistor. The doped polysilicon contact line in the
CMOS imager decreases leakage from the diffusion region into the substrate which
may occur with other techniques for interconnecting the diffusion region with the
source follower transistor gate. Additionally, the CMOS imager having a doped polysilicon
contact between the floating diffusion region and the source follower transistor
gate allows the source follower transistor to be placed closer to the floating
diffusion region, thereby allowing a greater photo detection region in the same
sized imager circuit.
