A shared bit line cross-point memory array structure is provided, along with
methods
of manufacture. The memory structure comprises a bottom word line with a top word
line overlying the bottom word line. A bit line is interposed between the bottom
word line and the top word line such that a first cross-point is formed between
the bottom word line and the bit line and a second cross-point is formed between
the bit line and the top word line. A resistive memory material is provided at
each cross-point above and below the bit line. A diode is formed at each cross-point
between the resistive memory material and either the top word line or the bottom
word line, respectively.
