A method for forming and the structure of a strained lateral channel of a field
effect transistor, a field effect transistor and CMOS circuitry is described incorporating
a drain, body and source region on a single crystal semiconductor substrate wherein
a hetero-junction is formed between the source and body of the transistor, wherein
the source region and channel are independently lattice strained with respect the
body region. The invention reduces the problem of leakage current from the source
region via the hetero-junction and lattice strain while independently permitting
lattice strain in the channel region for increased mobility via choice of the semiconductor
materials and alloy composition.
