A method of reading a selected resistive memory bit having its output connected
to a bitline, which is connected to a plurality of unselected electrically parallel
resistive memory bits, is provided. The method comprises selecting the resistive
memory bit to be read by applying a read voltage to an input of the resistive memory
bit, and unselecting the plurality of unselected resistive memory bits by applying
a deselect voltage to all inputs of the unselected resistive memory bits. The current
out of the bitline is then sensed by a current sensor. A memory device is also
provided comprising a plurality of resistive memory bits connected to a shared
bitline, a means for selecting a single bit from the plurality of resistive memory
bits, a means for deselecting the remaining, unselected bits from the plurality
of resistive memory bits and a means for sensing the output current from the bitline.
