Disclosed is a method for producing an array (20) of p-intrinsic-n
light detectors, as is an array produced in accordance with the method. The method
includes providing a wafer (1); forming a first layer (2) having
a first type of electrical conductivity (e.g., n-type) over a surface of the wafer;
forming a second layer (3) that is an intrinsic layer on the first layer
and, for each light detector, implanting or diffusing a region (9A) into
a surface of the second layer that is opposite the surface on the first layer,
the region (9A) having a second type of electrical conductivity (e.g., p-type).
The method further includes forming an opening or aperture, referred to herein
as a V-groove (6), through the second layer at least to the first layer;
and electrically contacting with a first electrical contact (15, 9B, 13B)
the first layer through the V-groove. The method further electrically contacts
each of the regions with an associated one of a second electrical contact (13A),
where the first and second electrical contacts are located on a same, non-radiation
receiving surface of the array. In a preferred embodiment the steps of electrically
contacting each comprise forming an Indium bump, and further comprise hybridizing
the array with a readout integrated circuit (30). In the preferred embodiment
forming the first layer over the surface of the wafer includes growing a doped
epitaxial layer over the surface of the wafer, or it may include implanting the
first layer into the surface of the wafer. Forming the second layer on the first
layer includes growing an intrinsic epitaxial layer on the first layer to a thickness
of, for example 10 microns. The wafer is thinned, either mechanically, or chemically,
or by both processes.
