A metal structure (600) for a bonding pad on integrated circuit wafers,
which have interconnecting metallization (101) protected by an insulating
layer (102) and selectively exposed by windows in the insulating layer.
The structure comprises a patterned seed metal layer (104) positioned on
the interconnecting metallization exposed by the window so that the seed metal
establishes ohmic contact to the metallization as well as a practically impenetrable
seal of the interface between the seed metal and the insulating layer. Further,
a metal stud (301) is formed on the seed metal and aligned with the window.
The metal stud is conformally covered by a barrier metal layer (501) and
an outermost bondable metal layer (502).
