The present invention relates to a bottom anti-reflective coat forming composition
having the resin with the structural unit comprising maleimide or maleimide derivative
for the lithography process in the preparation of semiconductor device. The resin
comprises maleimide or derivative thereof in the principal chain or the side chain
and its weight-average molecular weight is 700-1000000. The invention offers the
bottom anti-reflective coating for lithography showing high anti-reflective effect,
no intermixing with resist layer, excellent resist pattern, and large dry etching
rate in comparison to resist.
