Semiconductor device structures and methods of making such structures
that include one or more etched openings (e.g., capacitor containers and/or contact
apertures) therein with increased height-to-width ratios are provided. The structures
of the present invention are formed by successive layer deposition wherein conventional
patterning techniques may be utilized in a stepwise fashion as the height of the
structure is increased. Further provided is a self-aligning interconnection structure
which may be used to substantially vertically align openings formed in successively
deposited, vertically placed structural layers of a semiconductor device. The interconnection
structure utilizes a cap-and-funnel model that self-aligns to the center plane
of an opening in a first structural layer and also substantially prevents subsequently
deposited material from entering the opening.
