A ferroelectric memory device including a main bitline pull-up controller for
pulling
up a main bitline to a positive voltage, a column selection controller for connecting
the main bitline to a data bus by a column selection control signal, a cell array
connected between the main bitline pull-up controller and the column selection
controller, and a driving voltage booster for comparing a predetermined threshold
voltage with a detected power voltage and regulating an output level of the driving
voltage according to the comparison result.