A semiconductor component having a monitoring structure suitable for monitoring metal migration of a metallization system and a method for manufacturing the semiconductor component. A semiconductor substrate is provided having a major surface. A first extrusion monitoring element is formed over the major surface. A notched test element is formed over the first extrusion monitoring element. A second extrusion monitoring element is formed over the notched test element. A current is conducted through the notched test element. The resistance between the notched test element and at least one of the first and second extrusion monitoring elements is monitored to determine if a short has been created.

 
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