In order to fabricate a metallization plane with lines and contacts, four dielectric layers are applied to a substrate. Firstly, contact holes are etched through the top two dielectric layers into the underlying dielectric layer, the remaining thickness of the latter layer being essentially equal to the thickness of the top layer. Line trenches are subsequently etched selectively with respect to the first dielectric layer and the third dielectric layer, whose surfaces are uncovered essentially simultaneously. After the first dielectric layer and the third dielectric layer have been patterned, contacts and lines are produced in the contact holes and line trenches.

 
Web www.patentalert.com

< Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device

< Process and apparatus for isotope separation in low-gravity environment

> Power system for a telecommunication facility

> Device for converting solar radiation into electric power

~ 00201